Semiconductor component containing a highly refractive polymer material

ABSTRACT

A semiconductor component includes an optoelectronic semiconductor chip and an optical element arranged on a radiation passage area of the semiconductor chip, wherein the optical element is based on a highly refractive polymer material.

RELATED APPLICATIONS

This is a §371 of International Application No. PCT/EP2011/058580, withan international filing date of May 25, 2011 (WO 2011/160913 A1,published Dec. 29, 2011, which is based on German Patent Application No.10 2010 024 545.3 filed Jun. 22, 2010, the subject matter of which isincorporated herein by reference.

TECHNICAL FIELD

This disclosure relates to a semiconductor component and to a method forproducing a semiconductor component.

BACKGROUND

To increase the radiation power emitted by radiation-emittingsemiconductor components such as light-emitting diodes, for example, itis possible to make modifications to the semiconductor chip with regardto its layer construction or its geometry. However, this is complex andcost-intensive.

It could therefore be helpful to provide a semiconductor component inwhich the radiation power emitted during operation is increased.Furthermore, it could be helpful to provide a method for producing sucha semiconductor component by which such components can be produced in asimplified and reliable manner.

SUMMARY

We provide a semiconductor component including an optoelectronicsemiconductor chip and an optical element arranged on a radiationpassage area of the semiconductor chip, wherein the optical element isbased on a highly refractive polymer material.

We also provide a method of producing a semiconductor componentincluding providing an optoelectronic semiconductor chip, applying amolding compound for an optical element, wherein the molding compound isbased on a highly refractive polymer material, procuring the moldingcompound at a temperature of at most 50° C. and curing the moldingcompound.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 shows a first example of a semiconductor component in a schematicsectional view.

FIG. 2 shows an enlarged illustration of a semiconductor chip and of anoptical element in accordance with the first example illustrated in FIG.1.

FIG. 3 shows a second example of a semiconductor chip with an opticalelement in a schematic sectional view.

FIGS. 4A to 4E show illustrations of five examples of an optical elementin each case in a sectional view.

FIG. 5 shows a measurement of the radiation power P (in arbitrary units)emitted by semiconductor components as a function of the weight of theoptical element in multiples i of a predefined quantity of material.

FIGS. 6A to 6C show an example of a method of producing a semiconductorcomponent on the basis of intermediate steps illustrated schematicallyin sectional view.

DETAILED DESCRIPTION

Our semiconductor component may comprise an optoelectronic semiconductorchip and an optical element arranged on a radiation passage area of thesemiconductor chip. The optical element is based on a highly refractivepolymer material.

On account of its highly refractive property, the optical element canmake an improved contribution to reducing sudden changes in refractiveindex between semiconductor chip and surroundings.

In this context, “based” on a highly refractive polymer material meansthat the highly refractive polymer material forms the basic material forthe optical element. Further material can be admixed with the highlyrefractive polymer material as basic material, for example, luminescenceconversion material to convert radiation generated in the semiconductorchip and/or diffuser material.

Preferably, the optical element contains highly refractive polymermaterial with a proportion by weight of at least 80%.

Nanoparticles that increase the refractive index may be provided intothe highly refractive polymer material. The nanoparticles expedientlyhave a refractive index greater than the refractive index of the highlyrefractive polymer material. The nanoparticles are expediently formedwith regard to their average size such that they do not absorb, or atleast do not significantly absorb, the radiation to be generated and/orto be received by the semiconductor component.

A highly refractive material is understood to be a material which has arefractive index of at least 1.50.

Preferably, a refractive index of the optical element, in particular thepolymer material of the optical element, is at least 1.52, particularlypreferably at least 1.54. Furthermore, the refractive index of theoptical element is expediently less than a refractive index of thesemiconductor material of the semiconductor component facing the opticalelement.

Preferably, the optical element contains a silicone, an epoxide or ahybrid material. By way of example, diphenylsiloxane is distinguished bya comparatively high refractive index of 1.54.

The optical element serves for the beam shaping of the radiation passingthrough the radiation passage area of the semiconductor chip. In thiscase, the beam shaping can concern, in particular, the spatial and/orthe spectral emission characteristic.

In one configuration, the optical element is curved at least in regionson the side facing away from the semiconductor chip, in particular,convexly curved in a plan view of the semiconductor component. Theoptical element can thus fulfill the function of aradiation-concentrating lens.

The optical element preferably extends in a lateral direction at most asfar as a side area of the semiconductor chip which delimits thesemiconductor chip in a lateral direction. Consequently, the opticalelement does not project beyond the semiconductor chip in a lateraldirection. In case of doubt, a lateral direction is understood to be adirection that runs along a main extension plane of the semiconductorlayers of the semiconductor chip.

The side area delimiting the semiconductor chip in a lateral directioncan thus be free of the material for the optical element.

In one configuration, the optical element adjoins the semiconductorchip, preferably directly. In particular, the optical element is moldedonto the semiconductor chip during the production of the semiconductorcomponent.

Alternatively, the optical element may be prefabricated and furthermorepreferably fixed to the semiconductor chip by means of a connectinglayer.

Preferably, a luminescence conversion substance is embedded into theoptical element. The luminescence conversion substance is provided to atleast partly absorb the radiation generated in the semiconductor chipduring operation and converting it into radiation having a differentwavelength.

Further preferably, a further optical element is arranged on that sideof the optical element which faces away from the semiconductor chip, thefurther optical element being based on a highly refractive polymermaterial and furthermore preferably being convexly curved.

In this case, the optical element can serve for spectral beam shapingand the further optical element for spatial beam shaping.

The connecting layer arranged between the semiconductor chip and theoptical element is preferably highly refractive. In particular, therefractive index of the connecting layer is preferably greater than orequal to the refractive index of the adjoining optical element. Theconnecting layer can be based on a highly refractive polymer material,for instance a highly refractive silicone.

Further preferably, the semiconductor component has an encapsulationinto which the semiconductor chip is embedded. Preferably, theencapsulation covers the optical element at least in regions,particularly preferably completely. The encapsulation preferablydirectly adjoins the optical element at least in regions.

The encapsulation preferably has a refractive index less than therefractive index of the optical element and, if appropriate, of thefurther optical element.

Encapsulation is furthermore preferably in a lens-shaped fashion atleast in regions on the side facing away from the semiconductor chip.The spatial emission characteristic of the semiconductor component canbe set by the shape of the encapsulation.

In a method for producing a semiconductor component, an optoelectronicsemiconductor chip may be provided. A molding compound for an opticalelement is applied to the semiconductor chip, wherein the moldingcompound is based on a highly refractive polymer material. The moldingcompound is precured at a temperature of at most 50° C. The moldingcompound is cured.

What can be achieved by the upstream precuring is that the moldingcompound has a sufficient dimensional stability after the precuring. Theprecuring can be effected, in particular, at a temperature of 10° C. to30° C., for instance, at room temperature.

The risk of the molding compound deliquescing during the curing step isreduced by the precuring. The precuring is expediently effected suchthat the molding compound does not run over a side area of thesemiconductor chip. An undesirable change in the shape of the opticalelement before the complete curing of the molding compound and anassociated impairment of the quality of the optical element can thuslargely be reduced.

In one configuration, the precuring is induced by electromagneticradiation. Preferably, the precuring is effected by ultravioletradiation. However, radiation in a different spectral range, for examplemicrowave radiation, can also be employed.

We found that radiation-induced curing brings about faster gelation ofthe molding compound. The risk of the molding compound deliquescing isthereby more extensively reduced. In the case of purely thermal curing,by contrast, temperature changes that occur in this case are able tobring about or promote deliquescing.

Preferably, the molding compound is exposed to radiation with an energyinput of 0.2 J/cm² to 2.0 J/cm² during the precuring. This range hasproved to be particularly suitable for the production of an opticalelement having a high optical quality.

Alternatively or supplementarily, the molding compound can be activatedfor the precuring by mixing at least two components of the moldingcompound. In this case, activation of the molding compound can beeffected intrinsically, that is to say without further external action,and bring about precuring. This can be additionally initiated oraccelerated however, for example, by electromagnetic radiation.

Further preferably, thermal curing is carried out during the curing ofthe molding compound.

The curing is preferably effected at a higher temperature than theprecuring. On account of the precrosslinking of the molding compoundduring the precuring, the risk of thermally induced deliquescing duringthermal curing even at comparatively high temperatures is largelyreduced.

The higher the temperature during the thermal curing, the shorter theduration of the curing step can be. Preferably, the temperature is roomtemperature to 200° C., particularly preferably 50° C. to 150° C.

The molding compound can be applied directly to the optoelectronicsemiconductor chip. Alternatively, a further layer or a further element,for example, a plate containing a luminescence conversion substance, canalso be applied before the molding compound is applied,

The method described is suitable, in particular, to produce asemiconductor component described further above. Features mentioned inconnection with the semiconductor component can therefore also be usedfor the method, and vice versa.

Further configurations and expediencies will become apparent from thefollowing description of the examples in conjunction with the figures.

Elements which are identical, of identical type or act identically areprovided with the same reference signs in the figures.

The figures and the size relationships of the elements illustrated inthe figures among one another should not be regarded as to scale.Rather, individual elements may be illustrated with an exaggerated sizein order to enable better illustration and/or to afford a betterunderstanding.

A first example of a semiconductor component is schematicallyillustrated in sectional view in FIG. 1. The semiconductor component 1is by way of example a surface-mountable component (surface mounteddevice, SMD), for instance as a luminescence diode component.

The semiconductor component 1 comprises an optoelectronic semiconductorchip 2 and an optical element 3 arranged on a radiation passage area 20of the semiconductor chip 2.

The semiconductor component furthermore comprises a housing body 5molded onto a leadframe with a first contact 51 and a second contact 52.Furthermore, a thermal contact 53 is formed in the housing body 5. Incontrast to the first and second contacts, the thermal contactpredominantly does not serve for making electrical contact, but ratherfor dissipating heat generated in the semiconductor chip duringoperation.

During operation of the semiconductor chip 2, the first contact 51 andthe second contact 52 serve to inject charge carriers into thesemiconductor chip 2, in particular into an active region of thesemiconductor chip provided to generate radiation. The semiconductorchip 2 is electrically conductively connected to the second contact viaa connecting line 6, for example, a bonding wire. The connecting lineruns outside the optical element 3 at least in regions. The connectingline can also run completely outside the optical element 3.

The semiconductor component 1 furthermore comprises an encapsulation 4.The semiconductor chip 2 and, if appropriate, the connecting line 6are/is encapsulated by this encapsulation and thus protected againstexternal influences, for example, moisture, dust or mechanical loads.

Furthermore, the encapsulation completely molds around the opticalelement 3 on the side facing away from the semiconductor chip 2.

The encapsulation 4 can, for example, contain an epoxide or a siliconeor a mixture of an epoxide and a silicone or consist of such a material.

The optical element 3 is based on a highly refractive polymer materialand preferably has a refractive index of at least 1.52, particularlypreferably at least 1.54. In particular, the polymer material can have arefractive index of at least 1.52, preferably at least 1.54. The polymermaterial preferably contains a highly refractive silicone. By way ofexample, diphenysiloxane is distinguished by a comparatively highrefractive index of 1.54. Alternatively or supplementarily, some otherpolymer material, for example, an epoxide or a hybrid material, forinstance polyurethane, can also be employed.

Nanoparticles can furthermore be formed in the polymer material toincrease the refractive index, the nanoparticles having a higherrefractive index than the polymer material. The refractive index of theoptical element can thereby be more extensively increased. Expediently,the nanoparticles are embodied with regard to their size such that theydo not absorb or at least do not significantly absorb the radiationgenerated during operation of the semiconductor chip.

On the side facing away from the semiconductor chip 2, the opticalelement is such that it is convexly curved in a plan view of thesemiconductor component 1, and thus serves for the beam concentration ofthe radiation generated in the semiconductor chip.

In a lateral direction, that is to say along a direction running in amain extension plane of the semiconductor layers of the semiconductorbody 2, the optical element 3 does not extend beyond a side area 201delimiting the semiconductor body in a lateral direction. The side area201 is thus free of the material for the optical element 3.

The semiconductor chip 2 preferably contains a III-V compoundsemiconductor material. III-V semiconductor materials are particularlysuitable to generate radiation in the ultraviolet(Al_(x)In_(y)Ga_(1-x-y)N) through the visible (Al_(x)In_(y)Ga_(1-x-y)N,in particular for blue to green radiation, or Al_(x)In_(y)Ga_(1-x-y)P(phosphide compound semiconductor materials), in particular for yellowto red radiation) to the infrared (Al_(x)In_(y)Ga_(1-x-y)As (arsenidecompound semiconductor materials)) spectral range. Here 0≦x≦1, 0≦y≦1 andx+y≦1 in each case hold true, in particular where x≠1, y≠1, x≠0 and/ory≠0. With III-V semiconductor materials, in particular from the materialsystems mentioned, high internal quantum efficiencies can furthermore beachieved during generation of radiation.

Such semiconductor materials, in particular phosphide and arsenidecompound semiconductor materials, have a comparatively high refractiveindex.

On account of the high refractive index of the optical element 3, thesudden change in refractive index of radiation emerging through theradiation passage area 20 is reduced in comparison with a componentwithout such an optical element. That proportion of the radiation whichremains in the semiconductor body on account of total internalreflection at the radiation passage area 20 and is not coupled outdecreases as a result. In the case of a phosphide semiconductor chip 2,we found that the radiation power emitted from the component 1 can beincreased by up to 16% with the optical element.

FIG. 2 shows the semiconductor chip 2 and the optical element 3 of thefirst example described in connection with FIG. 1 in an enlargedillustration.

The semiconductor chip 2 has a semiconductor body 21 having asemiconductor layer sequence, which is preferably deposited epitaxially,forms the semiconductor body and comprises an active region 22 providedto generate radiation, the active region being arranged between a firstsemiconductor region 23 of a first conduction type and a secondsemiconductor region 24 of a second conduction type, which is differentthan the first conduction type. By way of example, the firstsemiconductor region 23 can be p-conducting and the second semiconductorregion 24 n-conducting, or vice versa.

The semiconductor body 21 is arranged on a carrier 27, wherein thecarrier can be, for example, a growth substrate for the semiconductorlayer sequence. A first contact layer 28 is arranged on that side of thecarrier which faces away from the semiconductor body 21. A secondcontact layer 29 is arranged on that side 27 of the semiconductor body21 which faces away from the carrier. The contact layers 28, 29 areprovided for injecting charge carriers into the active region 22 fromdifferent sides.

The highly refractive optical element 3 is formed on the radiationpassage area 20 of the semiconductor chip 2. The optical element alsocovers at least one part of the second contact layer 29 and furthermorealso a part of the connecting line 6 (not explicitly illustrated in thisfigure).

In a departure from the example described, it is also possible for bothcontact layers 20, 21 to be formed on the same side of the semiconductorbody. By way of example, the semiconductor chip can be embodied as aflip-chip such that the semiconductor chip has no contact on the side ofthe optical element 3. A semiconductor chip in which both contacts arearranged on the side facing the optical element can also be employed. Inthis case, two connecting lines can run within the optical element atleast in regions.

Furthermore, the optical element 3 described is also suitable for asemiconductor chip embodied as a radiation detector.

A second example of a semiconductor component 1 is illustratedschematically in sectional view in FIG. 3. This example substantiallycorresponds to the first example described in connection with FIGS. 1and 2. In particular, the semiconductor chip 2 can be arranged in ahousing body of a surface-mountable component, as described inconnection with FIG. 1.

It goes without saying, however, that the semiconductor chip, in thesame way as the semiconductor chip illustrated in FIG. 2, can also bearranged in a different housing form, for example, in a housing withradial geometry.

In contrast to the first example, the optical element 3 is a plate inwhich a luminescence conversion substance 32 is embedded.

A connecting layer 31 is arranged between the optical element 3 and thesemiconductor chip 2 by which connecting layer the optical element 3 isfixed to the semiconductor chip. The optical element is thereforealready prefabricated in this example.

The connecting layer 31 is preferably likewise highly refractive.Particularly preferably, the refractive index of the connecting layer 31is greater than or equal to the refractive index of the optical element3. The connecting layer 31 is furthermore preferably based on a highlyrefractive polymer material, for example, a highly refractive silicone.

A further optical element 35 is formed on that side of the opticalelement 3 which faces away from the semiconductor chip 2. The furtheroptical element 35 is preferably likewise based on a highly refractivepolymer material, for instance silicone, and serves for the beam shapingof the radiation emerging from the semiconductor chip 2.

With the connecting layer 31 and the optical element 3, a sudden changein refractive index for the radiation emerging from the semiconductorchip 2 is reduced such that the radiation power emerging from thesemiconductor chip can be increased. The further optical element 35serves to further increase the coupling-out of radiation and spatialbeam shaping. However, the further optical element 35 can also bedispensed with.

The luminescence conversion substance 32 in the optical element 3 isprovided for the at least partial conversion of radiation generated inthe active region 22 of the semiconductor body 21 during operation.

The optical element 3 with the connecting layer 31 can also be employedfor a semiconductor chip in the first example described in connectionwith FIG. 2.

In contrast to the semiconductor chip illustrated in FIG. 2, thesemiconductor chip in accordance with the second example illustrated inFIG. 3 has a carrier 27 that is different than a growth substrate forthe semiconductor layer sequence of the semiconductor body 21. Thecarrier 27 can, for example, contain a semiconductor material, forinstance silicon, gallium arsenide or germanium, or a ceramic, forinstance aluminum nitride or boron nitride, or consist of such amaterial. The semiconductor body 21 is fixed to the carrier by amounting layer 26. By way of example, an adhesive layer or a solderlayer is suitable for the mounting layer.

The carrier 27 mechanically stabilizes the semiconductor body 21. Thegrowth substrate is no longer necessary for this purpose and can bethinned or removed at least in regions or completely. A semiconductorchip in which the growth substrate is removed is also designated as athin-film semiconductor chip.

On the side facing away from the radiation passage area 20 of thesemiconductor chip, the semiconductor body 21 has a mirror layer 25,which reflects radiation emitted in the direction of the carrier 27toward the radiation passage area. The mirror layer 25 is expedientlyhighly refractive to the radiation generated in the active region 22 andfurthermore has a high reflectivity that is largely independent of theimpingement angle of the radiation. The mirror layer preferably containsa metal, for example, silver, rhodium, aluminum or chromium or ametallic alloy comprising at least one of the materials mentioned.

Furthermore, a distribution layer 29 a is formed between thesemiconductor body 21 and the second contact layer 29. The distributionlayer 29 a is provided for injection of charge carriers, the injectionbeing uniform in a lateral direction, via the first semiconductor region23 into the active region 22.

Given a sufficiently high transverse conductivity of the firstsemiconductor region 23, however, the distribution layer 29 a can alsobe dispensed with.

The distribution layer 29 a is expediently transparent or at leasttranslucent to the radiation generated in the active region 22. By wayof example, the distribution layer 29 a can contain a transparentconductive oxide (TCO), for instance indium tin oxide (ITO) or zincoxide (ZnO). Alternatively or supplementarily, it is also possible toemploy a metal layer which is so thin that the radiation can at leastpartly pass through.

The semiconductor body 21, in particular the active region 22, can bebased on a nitride semiconductor material, for example, and can beprovided to generate blue or ultraviolet radiation. Together with theradiation converted in the optical element 3 by the luminescenceconversion substance 32, it is thus possible to form an integrated mixedlight source, for example, a white light source. For a componentcomprising such a semiconductor chip, an increase in the radiation poweron account of the optical element 3 of approximately 5% was observed.

FIGS. 4A to 4E show different examples of an optical element 3 on asemiconductor chip 2. The optical elements differ in the quantity ofmaterial used during production. In the figures, the quantity ofmaterial used is four quantitative units (FIG. 4A), five quantitativeunits (FIG. 4B), seven quantitative units (FIG. 4C), ten quantitativeunits (FIG. 4D) and 13 quantitative units (FIG. 4E).

The figures show that as the quantity of material increases, the heightof the optical element 3, that is to say the extent perpendicular to thesemiconductor chip, can be increased. In these examples, the height is157 μm, 175 μm, 241 μm, 301 μm and 365 μm, respectively.

The figures furthermore show that the molding compound used duringproduction for the optical element 3 remains completely on the radiationpassage area of the semiconductor chip 2 and does not run beyond theside areas of the semiconductor chip. It is thus possible to realizeoptical elements whose side facing away from the semiconductor chipcomes close to a shape having spherical curvature.

The influence of the size of the optical element 3 for the examplesillustrated in FIGS. 4A to 4E is illustrated in FIG. 5, wherein theemitted radiation power P in arbitrary units is illustrated as afunction of the quantity of material used in multiples i of a predefinedquantitative unit.

The measured values for i=0 represent a reference measurement for astructurally identical component without a highly refractive opticalelement.

The curve 7 illustrates a polynomial fit to the measured values. Themeasurements show that the radiation power P first increases as the sizeof the optical element 3 increases. A maximum of the radiation power isobtained for i=10, the power curve having a comparatively flat maximum.Similarly high output powers are thus obtained in the range of i=7 toi=13. The greater the number of quantitative units i, the greater theextent to which the shape of the optical element approximates to aspherically curved curve shape. However, with an increasing number ofquantitative units, the required quantity of material increases, whichleads to higher production costs.

An example of a method of producing a semiconductor component is shownin FIGS. 6A to 6C on the basis of intermediate steps illustratedschematically in sectional view. The method is illustrated merely by wayof example for producing a semiconductor component in accordance withthe first example described in connection with FIGS. 1 and 2.

As illustrated in FIG. 6A, an optoelectronic semiconductor chip isprovided. The optoelectronic semiconductor chip can, in particular,already be fixed on a connection carrier or in a housing for asurface-mountable component.

A molding compound 30 for an optical element is applied to thesemiconductor chip 2, the molding compound being based on a highlyrefractive silicone. The molding compound is precured at a temperatureof at most 50° C., preferably at a temperature of 10° C. to 30° C. Inthis example, precuring is effected by electromagnetic radiation, inparticular radiation in the ultraviolet spectral range. As a result ofprecuring at comparatively low temperatures, the molding compoundexperiences precrosslinking such that the molding compound acquires anat least temporarily sufficient dimensional stability.

The molding compound is furthermore preferably self-adhesive. Reliableapplication of the molding compound is thereby simplified.

The molding compound is subsequently cured. The curing can be effectedas thermal curing, for example, the temperature preferably being higherthan the temperature during precuring. Thermal curing can already occurat room temperature. The higher the temperature, the faster the curingprocess takes place. In particular starting from a temperature of 50°C., the curing process is significantly accelerated. The temperature ispreferably 50° C. to 150° C. In this curing step, it is possible to setthe properties of the optical element to be produced, for example, thedegree of crosslinking, elasticity and/or hardness of the opticalelement.

In contrast to purely thermal curing, the precuring by electromagneticradiation upstream of the curing brings about no deliquescing or atleast greatly reduced deliquescing of the molding compound 30 such thatoptical elements of high quality can be produced with a highreproducibility. The geometrical shaping of the optical element 3 can bevaried within wide limits. In particular it is possible to produceoptical elements which have a high aspect ratio, that is to say a highratio of height to width.

The energy input of the radiation is preferably 0.2 J/cm² to 2.0 J/cm²during precuring.

The input of the electromagnetic radiation in the ultraviolet spectralrange is illustrated by an arrow 8 in FIG. 6B. Alternatively, however,it is also possible to employ radiation in a different spectral range,for example, microwave radiation.

In a departure from the example described, precuring can also be inducedby mixing at least two components of the molding compound 30. In thiscase, therefore, precuring can be induced without a further externalpulse.

Furthermore, instead of the highly refractive silicone, it is alsopossible to employ some other highly refractive polymer material, forexample, an epoxide or a hybrid material.

In this example, the molding compound 30 is applied after electricalcontact has already been made with the semiconductor chip 2 by theconnecting line 6. The molding compound 30 therefore also molds around apart of the connecting line 6.

The method described can be used to produce semiconductor componentscomprising optical elements which, on account of their high refractiveindex, bring about an increase in the coupling-out efficiency from thesemiconductor chip and at the same time can be produced particularlyreliably with regard to their shape, without the material for theoptical element running over the side area of the semiconductor chip 2.

Consequently, in addition to increasing the radiation power emergingoverall from the semiconductor chip, geometrical beam shaping that canbe set reliably and reproducibly can also be obtained.

In particular, the method is distinguished by a high reliability notonly when applying the molding compound 30 directly on semiconductormaterial, but also on surfaces that can be provided with an opticalelement only with difficulty by conventional methods, for example, on asilicone layer.

Our components and methods are not restricted by the description on thebasis of the examples. But rather, the disclosure encompasses any novelfeature and also any combination of features, which in particularincludes any combination of features in the appended claims, even if thefeature or combination itself is not explicitly specified in the claimsor the examples.

The invention claimed is:
 1. A semiconductor component comprising anoptoelectronic semiconductor chip and an optical element arranged on aradiation passage area of the semiconductor chip, wherein 1) the opticalelement is based on a highly refractive polymer material having arefractive index of at least 1.52, formed in one piece, directly adjoinsthe semiconductor chip, and convexly curved on a side facing away fromthe semiconductor chip, wherein the optical element extends in a lateraldirection at most as far as a side area of the semiconductor chip, 2)the semiconductor chip electrically connects to a contact of thesemiconductor device via a connecting line, the optical element partlycovers the connecting line, and the connecting line runs outside theoptical element in selected locations, and 3) a side area delimiting thesemiconductor chip in a lateral direction is free of material for theoptical element.
 2. The semiconductor component according to claim 1,wherein the optical element contains a silicone, an epoxide or a hybridmaterial.
 3. The semiconductor component according to claim 1, whereinnanoparticles that increase the refractive index are embedded into thehighly refractive polymer material.
 4. The semiconductor componentaccording to claim 1, wherein the optical element is convexly curved ona side facing away from the semiconductor chip in a plan view of thesemiconductor component.
 5. The semiconductor component according toclaim 1, wherein the optical element extends in a lateral direction atmost as far as a side area of the semiconductor chip.
 6. Thesemiconductor component according to claim 1, further comprising aluminescence conversion substance embedded into the optical element. 7.The semiconductor component according to claim 1, further comprising aluminescence conversion substance embedded into the optical element anda further optical element arranged on that side of the optical elementwhich faces away from the semiconductor chip, said further opticalelement being based on a highly refractive polymer material and beingconvexly curved.
 8. The semiconductor component according to claim 7,wherein a highly refractive connecting layer is arranged between thesemiconductor chip and the optical element.
 9. The semiconductorcomponent according to claim 1, wherein the refractive index of theoptical element is less than a refractive index of the semiconductormaterial of the semiconductor component facing the optical element.